 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| = =- ----= = an AMP company RF MOSFET Power Transistor, 3OW, 12V 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Specifically Designed for 12 Volt Applications .. DUI 230s Absolute Maximum Ratings at 25C Parameter 1 Symbol 1 Rating 1 Units 1 Drain-SourceVoltage Gate-Source Voltage Drain-Source Current 1 Power Dissipation Junction Temperature Storage Temperature Thermal Resistance I VDS V0s `Ds PO TJ I 40 20 8 175 200 -55to+150 V V A IwI "C "C I T STG BJCI 1 I "C/w I 1 E F G 1 6.22 1 6.48 1 245 222 1 .llS 1 255 22s 1 ,130 1 5.64 1 2.92 1 5.79 3.30 Electrical Characteristics at 25C Input Capacitance Output Capacitance ReverseCapacitance Power Gain Drain Efficiency Load Mismatch Tolerance C0% C Rss GP 9D V,,=12.0 V, F=l.O MHz 120 24 pF pF dB % - V&2.0 V&2.0 V, F=l .OMHz V, F=l .OMHz 9.0 50 - 3O:l Vb,=12.0 V, I,,=200 mA, PO,=30 W, F=175 MHz V,,=12.0 V, I,,=200 mA, PO,=30 W, F=175 MHz V,,=l2.0 V, I,,=200 mA, PO,,=30 W, F=l75 MHz VSWR-T Specifications Subject to ChangeWithoutNotice. MIA-COM, North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Inc. Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 3OW, 12V DU1230S v2.00 Typical Broadband Performance Curves EFFICIENCY V,,=lZ 60 70 g $ 2 ii b u. w vs FREQUENCY mA GAIN vs FREQUENCY v,,=12 20 V I,,=200 Poe30 W V IDo= mA PouT=30 W 60 50 40. 30. 12 20 10 0 - 10 50 FREOUENCY 150 200 25 50 100 150 175 (MHz) FREQUENCY (MHz) POWER OUTPUT vs SUPPLY VOLTAGE I,,=200 40 mA F=l75 MHz Pp3.0 W g 5 5 0 5 30 I 20 3 g 10 0 0 0.2 0.3 1 2 3 4 5 6 7 6 10 15 POWER INPUT(W) SUPPLY VOLTAGE (V) Specifications Subject to Change Without Notice. M/A-COM, inc. Tel. (800) 366-2266 Fax (800) 618-8883 w Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 North America: RF MOSFET Power Transistor, 3OW, 12V DU1230S v2.00 Typical Device Impedance Frequency (MHz) Z,, (OHMS) Z LDAD (OHMS) 30 100 175 12.0 -j 14.0 4.0 - j 8.0 2.0 - j 2.5 V,,=12 V, I,,=200 mA, PO,,.=30 Watts 2.5 + j 3.0 2.5-j 1.0 2.5 - i 0.5 Z,, is the series equivalent input impedance of the device from gate to source. Z LOAD the tptimum series equivalent load impedance as measured from drain to ground. is RF Test Fixture VGS J3 VDS J4 VDS = 12 VOLTS IDO = POOmA L4 h CCL Cl0 Cl1 -- I -- I -- t; AC5 RF IN Jl Cl F2 c2 - -L - T c3 r- Ai ;i PARTS LIST ARC0 ARC0 SEMCO NO. 462 TRIMMER NO. 422 TRIMMER CAPACITOR SopF FEEDTHROUGH SEMCO SEMCO CAPACITOR 3OpF ~OOOPF C6 Cl.C6 c2.c7 c3 C4,CS C6 c9 Cl0 Cl1 Ll .w L2 CAPACITOR CAPACITOR 5-8opF 4-4opF O.OOluF CAPACITOR CAPACKOR MONOLITHIC ELECTROLMIC CERAMIC CAPACITOR O.OluF CAPACITOR 5OuF 50 V. NO. 12 AWG COPPER 6 TURNS WIRE X 1' WIRE ON OF NO. 20 AWG ENAMEL `0.25'. CLOSE WOUND L4 12 TURNS OF NO. 20 AWG ON `025'. CLOSE WOUND Rl.PxZ Ql RESISTOR DU123OS FR4 0.062 1OOK OHMS Specifications Subject to Change Without Notice. MIA-COM, North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n inc. Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 |
Price & Availability of DUI230S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |